Work

Engineering the energy gap near the valence band edge in Mn-incorporated Cu 3 Ga 5 Te 9 for an enhanced thermoelectric performance

Year: 2016

Type: article

Abstract: Mn substitution for Cu in Cu 3 Ga 5 Te 9 engineers the energy gap (Δ E A ) between impurity and valence bands, which is responsible for the reduction of the potential barrier for thermal excitation of carriers.

Source: Journal of Materials Chemistry C

DOI: 10.1039/c6tc02745h

Authors: Jiaolin Cui, Zheng Sun, Zhengliang Du, Yimin Chao

Institutions: Ningbo University of Technology, Taiyuan University of Technology, University of East Anglia

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: National Natural Science Foundation of China, Taiyuan University of Technology, Natural Science Foundation of Zhejiang Province

Awards: G1969905583, G2326355051, G8600042106

OpenAlex ID: W2481374262

FWCI: 0.769

Cites: 38

Cited by: 6

Related to: 10