Year: 2016
Type: article
Abstract: Reported growth processes for kesterite absorber layers generally rely on a sequential process including a final high temperature annealing step. However, the impact and details for this annealing process vary among literature reports and little is known on its impact on electrical properties of the absorber. We used kesterite absorber layers prepared by a high temperature co-evaporation process to explicitly study the impact of two different annealing processes. From electrical characterization it is found that the annealing process incorporates a detrimental deep defect distribution. On the other hand, the doping density could be reduced leading to a better collection and a higher short circuit current density. The activation energy of the doping acceptor was studied with admittance spectroscopy and showed Meyer–Neldel behaviour. This indicates that the entropy significantly contributes to the activation energy.
Source: Journal of Applied Physics
DOI: 10.1063/1.4959611
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2481947583