Work

Thin–film trilayer manganate junctions

Year: 1998
Type: article
Abstract: Spin–dependent conductance across a manganate–barrier–manganate junction has recently been demonstrated. The junction is a La0.67Sr0.33MnO3–SrTiO3–La0.67Sr0.33 MnO3 trilayer device supporting current–perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2 K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.
Author: Sun J. Z.
Language: English
Open Access status: green
OpenAlex ID: W2489800643
FWCI: 3.075
Cites: 48
Cited by: 29
Related to: 10