Work

Simple simulation approach for the first trigger step of SEB (single event burn-out) based upon physical analysis for Si high voltage bipolar device

Year: 2016

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2016.7520841

Authors: Y. Yoshiura, M. Tabata, H. Muraoka, N. Taniguchi, K. Suzuki, S. Aono, M. Tarutani, T. Minato, K. Takakura, K. Uryu

Institution: Mitsubishi Electric (Japan)

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2499170568

FWCI: 1.407

Cites: 1

Cited by: 11

Related to: 10