Work

Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

Year: 2016

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4959786

Authors: Shihyun Ahn, Byung-Jae Kim, Yi-Hsuan Lin, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Ivan I. Kravchenko

Institutions: University of Florida, Korea University, Center for Nanophase Materials Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Defense, Defense Threat Reduction Agency, Office of Science

Award: G5756752099

OpenAlex ID: W2504818077

FWCI: 0.668

Cites: 34

Cited by: 16

Related to: 10