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Thermoelectric Conversion. III. Thermoelectric properties of rf-sputtered CoSb3 thin films on GaAs(100) substrate.

Year: 1997

Type: article

Abstract: The thin film growth of CoSb3 on a GaAs(100) substrate (the resistivity: 107Ωcm) was made by using magnetron rf-sputtering, and the electrical and thermoelectric properties of the films were studied with relation to annealing temperature and film thickness. Polycrystalline films with the skutterudite structure were successfully grown on the GaAs (100) substrate. The obtained films were found to be p-type, and their hole mobility, electrical conductivity, and Seebeck coefficient depended significantly on the annealing temperature and the thickness. The Seebeck coefficient of 600μV/K, which is about three times as large as that for a p-type single crystal, was obtained for the thin film annealed at 750°C with thickness of 71nm, and the power factor reached about 2×10-4 Wcm-1K-2.

Source: Journal of Advanced Science

DOI: 10.2978/jsas.9.180

Authors: Hiroaki ANNO, Hiroko KANEKO, Kakuei MATSUBARA, Tsutomu SAKAKIBARA, Yasuhiro NOTOHARA, Hirofumi TASHIRO, Tsuyosi KOYANAGI

Institutions: Tokyo University of Science, Panasonic (Japan), Toyo Kohan (Japan), Yamaguchi University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2509489531

FWCI:

Cites: 1

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