High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique
Year: 2006
Type: dissertation
Abstract: This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-ratio) have been demonstrated using the modified three-pulse process.\nCapacitive resonators, SiBAR and IBAR devices have been fabricated using the process developed in this work. IBARs (15MHz) with ultra-high Q (210,000) have been reported.
Author: John Kangchun Perng
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2512909473