Work

Chemical etching behavior of non-polar GaN sidewalls

Year: 2016

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2016.08.039

Authors: Younghun Jung, Soohwan Jang, Kwang Hyeon Baik, Hong-Yeol Kim, Jihyun Kim

Institutions: Korea University, Dankook University, Hongik University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Trade, Industry and Energy

OpenAlex ID: W2513800829

FWCI: 0.267

Cites: 19

Cited by: 2

Related to: 10