Work

Inkjet printed carbon nanotubes in short channel field effect transistors: influence of nanotube distortion and gate insulator interface modification

Year: 2016

Type: article

Abstract: We report on the effects of mechanical distortion and gate insulator-semiconductor interface modification on the electronic transport characteristics of inkjet printed short channel length single walled carbon nanotube (SWCNT) transistors with Al 2 O 3 top gate insulators. In these transistors, which are typically ambipolar, the average nanotube length is greater than the source-drain (S/D) spacing resulting in individual SWCNTs spanning the entire channel length. Mechanical distortion of the nanotubes due to bending near source and drain contacts when they are not recessed is found to suppress electron transport and transform the ambipolar transistors into p-type devices. Inclusion of printed interfacial polymer layers such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) between the SWCNTs and Al 2 O 3 also results in p-type doping and reductions in electron transport. We discuss mechanisms responsible for these effects.

Source: Flexible and Printed Electronics

DOI: 10.1088/2058-8585/1/3/035001

Authors: Seonpil Jang, Seohee Kim, Michael L Geier, Mark C Hersam, Ananth Dodabalapur

Institutions: The University of Texas at Austin, Northwestern University

Language: English

Topic: Nanomaterials and Printing Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Multidisciplinary University Research Initiative, Office of Naval Research, Division of Electrical, Communications and Cyber Systems

Awards: Improving the design and performance of polymer thin-film transistors for circuit applications., G2286152769, G2850050329, G8876996369, G906114614