Body diode reliability investigation of SiC power MOSFETs
Year: 2016
Type: article
Source: Microelectronics Reliability
Authors: A. Fayyaz, G. Romano, A. Castellazzi
Institutions: University of Nottingham, University of Naples Federico II
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2520287249