Year: 2016
Type: article
Abstract: We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.
Source: Applied Physics Letters
DOI: 10.1063/1.4964404
Authors: S. Maeda, S. Miyamoto, M. H. Fauzi, K. Nagase, K. Sato, Y. Hirayama
Institution: Tohoku University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2521334277