Work

Mobility anisotropy of two-dimensional semiconductors

Year: 2016

Type: article

Abstract: The carrier mobility of anisotropic two-dimensional semiconductors under longitudinal acoustic phonon scattering was theoretically studied using deformation potential theory. Based on the Boltzmann equation with the relaxation time approximation, an analytic formula of intrinsic anisotropic mobility was derived, showing that the influence of effective mass on mobility anisotropy is larger than those of deformation potential constant or elastic modulus. Parameters were collected for various anisotropic two-dimensional materials (black phosphorus, Hittorf's phosphorus, ${\mathrm{BC}}_{2}\mathrm{N}$, MXene, ${\mathrm{TiS}}_{3}$, and ${\mathrm{GeCH}}_{3}$) to calculate their mobility anisotropy. It was revealed that the anisotropic ratio is overestimated by the previously described method.

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.94.235306

Authors: Haifeng Lang, Shuqing Zhang, Zhirong Liu

Institutions: Peking University, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: National Natural Science Foundation of China

Award: 石墨烯迁移率的计算研究