Work

Preferential growth of μc-Ge : H along the crystallographic axes of Si and Ge substrates by ECR plasma CVD

Year: 2003

Type: article

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1023/a:1026159927536

Authors: S. Kobayashi, T. Shimizu, T. Aoki, T. Asakawa

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Promotion and Mutual Aid Corporation for Private Schools of Japan

OpenAlex ID: W25241949

FWCI:

Cites: 8

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Related to: 10