Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
Year: 2016
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4963820
Institutions: Case Western Reserve University, United States Air Force Research Laboratory, Wright-Patterson Air Force Base, Universal Technology Corporation (United States), Wright Laboratory, U.S. Air Force Research Laboratory Materials and Manufacturing Directorate, United States Naval Research Laboratory
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2525352836