Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications
Year: 2016
Type: conference-paper
Source: Symposium on VLSI Technology
Authors: H.-J. Cho, H.S. Oh, K.J. Nam, Y.H. Kim, K.H. Yeo, W.D. Kim, Y.S. Chung, Y.S. Nam, S.M. Kim, W.H. Kwon, M.J. Kang, I.R. Kim, H. Fukutome, C.W. Jeong, H.J. Shin, Y.S. Kim, D.W. Kim, S.H. Park, H.S. Oh, J.H. Jeong, S.B. Kim, D.W. Ha, J.H. Park, H.S. Rhee, S.J. Hyun, D.S. Shin, D.H. Kim, H.Y. Kim, S. Maeda, K.H. Lee, Y.H. Kim, M.C. Kim, Y.S. Koh, B. Yoon, K. Shin, N.I. Lee, S.B. Kangh, K.H. Hwang, J.H. Lee, J.-H. Ku, S.W. Nam, S.M. Jung, H.K. Kang, J.S. Yoon, E.S. Jung
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2526988581