Year: 2015
Type: article
Abstract: The phase change material of Ge-doped Sb 2 Te 3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb 2 Te 3 . Ge 0.11 Sb 2 Te 3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge 2 Sb 2 Te 5 . In addition, Ge 0.11 Sb 2 Te 3 presents extremely rapid reverse switching speed (10 ns), and up to 10 5 programming cycles are obtained with stable set and reset resistances.
Source: Chinese Physics Letters
Authors: Yue-Qin Zhu, Zhong-Hua Zhang, San-Nian Song, Hua-Qing Xie, Zhi-Tang Song, Lan-Lan Shen, Le Li, Liang-Cai Wu, Bo Liu
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2531605344