Work

Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p–n junctions

Year: 2016

Type: article

Source: Applied Optics

DOI: 10.1364/ao.55.00d101

Authors: Changzhi Shi, Chun Lin, Yanfeng Wei, Lu Chen, Mingxing Zhu

Institutions: Chinese Academy of Sciences, Shanghai Institute of Technical Physics

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Shanghai Institute of Technical Physics, Chinese Academy of Sciences

OpenAlex ID: W2531828768

FWCI: 0.914

Cites: 10

Cited by: 16

Related to: 10