MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
Year: 2017
Type: article
Abstract: Electrically injected deep ultra-violet emission is obtained using monolayer thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy. Single peaked emission spectra are achieved with narrow full width at half maximum for three different light emitting diodes operating at 232 nm, 246 nm, and 270 nm. 232 nm (5.34 eV) is the shortest electroluminescence (EL) emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced doping.
Source: Applied Physics Letters
DOI: 10.1063/1.4975068
Authors: S. M. Islam, Kevin Lee, Jai Verma, Vladimir Protasenko, Sergei Rouvimov, Shyam Bharadwaj, Huili (Grace) Xing, Debdeep Jena
Institutions: Cornell University, University of Notre Dame
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2533428909