Work

Shallow junctions-modeling the dominance of point defect charge states during transient diffusion

Year: 2003

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1989.74373

Author: R.B. Fair

Institutions: Duke University, MCNC Research and Development Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2535230514

FWCI:

Cites: 24

Cited by: 1

Related to: 10