Year: 2016
Type: article
Abstract: Sputter-deposited indium–tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga 2 O 3 (010) substrates with a carrier concentration of 2 × 10 17 cm −3 after rapid thermal annealing in a wide range of annealing temperatures of 900–1150 °C. The formation of an ohmic contact is attributed to interdiffusion between ITO and β-Ga 2 O 3 , as evidenced by the results of transmission electron microscopy and energy-dispersive X-ray spectroscopy. The interdiffusion decreases the band gap and increases the donor concentration of β-Ga 2 O 3 at the interface, and forms an intermediate semiconductor layer desirable for carrier transport. The ITO ohmic contact is particularly useful for future β-Ga 2 O 3 devices operated at high temperatures.
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Awards: 酸化ガリウム混晶半導体薄膜を用いたヘテロ接合デバイスの開発, Measurements and analysis of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentration, Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap, Study on Ga2O3 based heterojunction for device applications, Development of electroactive materials through the analysis of electronic phase diagrams of epitaxial transition-metal oxides
OpenAlex ID: W2542353702