Work

Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor

Year: 2002

Type: conference-abstract

Source: IEEE/LEOS Summer Topical Meetings

DOI: 10.1109/leosst.1997.619238

Authors: J.T. Kobayashi, N.P. Kobayashi, P.D. Dapkus, X. Zhang, D.H. Rich

Institution: University of Southern California

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2542380408

Cites:

Cited by: 1

Related to: 10