Work

Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

Year: 2002

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1993.347207

Authors: H.F. Wei, N.M. Kalkhoran, F. Namavar, J.E. Chung

Institutions: Massachusetts Institute of Technology, Spire Corporation (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2542747456

FWCI: 1.067

Cites: 5

Cited by: 14

Related to: 10