Work

S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

Year: 2016

Type: article

Abstract: We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capacitance, fringing fields, high-field velocity saturation, and self-heating, the latter being found to play an important role. The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyze device properties for sub-100 nm gate lengths. Using the experimental fit, we demonstrate the feasibility of circuit simulations using properly scaled devices. The complete model is implemented in SPICE-compatible Verilog-A, and a downloadable version is freely available at the nanoHUB.org.

Source: Journal of Applied Physics

DOI: 10.1063/1.4971404

Authors: Saurabh V. Suryavanshi, Eric Pop

Institution: Stanford University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Semiconductor Research Corporation

Award: Network for Computational Nanotechnology - NEEDS Node