Work

Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs

Year: 2012

Type: conference-paper

Source: International Conference on Electrical and Computer Engineering (ICECE)

DOI: 10.1109/icece.2012.6471640

Authors: Fahim Ur Rahman, Md. Shafayat Hossain, Saeed Uz Zaman Khan, Rifat Zaman, Md. Obaidul Hossen, Quazi D. M. Khosru

Institution: Bangladesh University of Engineering and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2546154290

FWCI:

Cites: 8

Cited by: 2

Related to: 10