Work

Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification

Year: 2012

Type: conference-paper

Source: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

DOI: 10.1109/edssc.2012.6482770

Authors: Md. Shafayat Hossain, Saeed Uz Zaman Khan, Md. Obaidul Hossen, Fahim Ur Rahman, Rifat Zaman, Quazi D. M. Khosru

Institution: Bangladesh University of Engineering and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2548492171

FWCI:

Cites: 5

Cited by:

Related to: 10