Work

Physics-based hot-carrier degradation model for SiGe HBTs

Year: 2016

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad.2016.7605216

Authors: Hamed Kamrani, Dominic Jabs, Vincenzo d'Alessandro, Niccolo Rinaldi, Christoph Jungemann

Institutions: RWTH Aachen University, University of Naples Federico II

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2548767572

FWCI: 1.403

Cites: 16

Cited by: 10

Related to: 10