Structural And Electronic Properties of Two-Dimensional Silicene, Graphene, and Related Structures
Year: 2012
Type: article
Abstract: Traditional CMOS (complementary metal-oxide-semiconductor) transistors have already been in the nanometer range. As bulk silicon material is approaching its physical limits, it is highly desirable to seek novel, functional materials to continue Moore's law. Two-dimensional(2D) materials, such as graphene and silicene, have attracted great attention since they were envisioned a few years ago, having extraordinary electrical properties. Research in this work was focused on understanding the structural and electronic properties of a few atomic layers of carbon (graphene) and silicon (silicene). Atomic structures of the 2D materials, corresponding band structures, and transport properties were calculated based on density functional theory. Band gap was observed in AB forwardly-stacked bilayer silicene with proper layer distance. Applying an external electric field resulted in further opening of the band gap up to 0.19 eV. In addition, transmission spectrum and I-V curves were calculated. A new structure of a thin silicon layer on graphene substrate is proposed, showing different transport properties from 2D silicene.
Author: Ruiping Zhou
Institution: Wright State University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2553096012