Work

Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage

Year: 2016

Type: conference-paper

Authors: Menia Beier-Moebius, Josef Lutz

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2554192573

FWCI: 3.25

Cites:

Cited by: 18

Related to: 10