Work

Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium–zinc oxide thin films

Year: 2016

Type: article

Abstract: To realize high thermoelectric performance, it was tried to control both high electrical conductivity (σ) and low thermal conductivity ( K ) for the Sn-doped indium–zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 °C due to the highest σ. However, the highest figure of merit was obtained annealed at 500 °C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.56.010304

Authors: Jayoung Byeon, Seohan Kim, Jae-Hong Lim, Jae Yong Song, Sun Hwa Park, Pungkeun Song

Institutions: Pusan National University, Korea Institute of Materials Science, Korea Research Institute of Standards and Science

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Ministry of Trade, Industry and Energy, Small and Medium Business Administration

Award: G2114318552