Work

Epitaxially Self‐Assembled Alkane Layers for Graphene Electronics

Year: 2016

Type: article

Abstract: The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane self-assembled layers.

Source: Advanced Materials

DOI: 10.1002/adma.201603925

Authors: Young‐Jun Yu, Gwan‐Hyoung Lee, Ji Il Choi, Yoon Su Shim, Chul‐Ho Lee, Seok Ju Kang, Sunwoo Lee, Kwang Taeg Rim, George W. Flynn, James Hone, Yong‐Hoon Kim, Philip Kim, Colin Nuckolls, Seokhoon Ahn

Institutions: Electronics and Telecommunications Research Institute, Yonsei University, Korea Advanced Institute of Science and Technology, Korea University, Ulsan National Institute of Science and Technology, Columbia University, Harvard University, Korea Institute of Science and Technology

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: U.S. Department of Energy, Ministry of Science, ICT and Future Planning, Ministry of Science ICT and Future Planning, Microelectronics Advanced Research Corporation, Defense Advanced Research Projects Agency

Awards: G1037140498, G1057284625, TAS::89 0227::TAS RECOVERY; RECOVERY ACT - RE-DEFINING PHOTOVOLTAIC EFFICIENCY THROUGH MOLECULE-SCALE CONTROL -- EFRC; PI - JAMES YARDLEY, G3415606376, G4994735225, G5837941980

OpenAlex ID: W2559515712

FWCI: 1.894

Cites: 48

Cited by: 29

Related to: 10