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Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate

Year: 2017
Type: article
Abstract: The lateral ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a function of growth rate, using the Hopkins-Skellam index (HSI). Coherent QD arrays have a spatial distribution which is neither random nor ordered, but intermediate. The lateral ordering improves as the growth rate is increased and can be explained by more spatially regular nucleation as the QD density increases. By contrast, large and irregular 3D islands are distributed randomly on the surface. This is consistent with a random selection of the mature QDs relaxing by dislocation nucleation at a later stage in the growth, independently of each QD’s surroundings. In addition we explore the statistical variability of the HSI as a function of the number N of spatial points analysed, and we recommend N > 103 to reliably distinguish random from ordered arrays.
DOI: 10.1038/srep42606
Authors: T. Konishi, E. Clarke, C. W. Burrows, J. J. Bomphrey, R. Murray, G. R. Bell
Institutions: Anan National College of Technology, National Institute of Technology, Engineering and Physical Sciences Research Council, University of Sheffield, University of Warwick, Imperial College London
Language: English
Open Access status: gold
Estimated APC paid: $2,690
Awards: Strain engineered InAs/GaAs quantum dots for long wavelength emission, InAs/GaAs quantum dot SESAMs for long wavelength applications, G3013191812, Spin Ping Pong - Towards a Quantum Dot spin QuBit, G7936917383, G8841909755
OpenAlex ID: W2561206520
FWCI: 0.401
Cites: 33
Cited by: 6
Related to: 10