Work

Comparative Analysis of Leakage Power With 10 Nm Channel Length in Mosfet/cntfet Devices

Year: 2015

Type: article

Authors: Sanjeet Kumar Sinha, Saurabh Chaudhury

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2561246903

FWCI: 0.155

Cites: 18

Cited by: 1

Related to: 10