Work

Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

Year: 2016

Type: article

Abstract: We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot.We have found that the hole states are segmented and resemble the states in the quantum dot molecules.The two-hole states form singlet and triplet with the splitting energy of 4 µeV/325 µeV for the case (i)/(ii).We have also tested the possibility to tune the splitting by vertically applied magnetic field.Because the predicted tunability range was limited, we propose an approach for its enhancement.

Source: Acta Physica Polonica A

DOI: 10.12693/aphyspola.129.a-62

Authors: P. Klenovský, V. Křápek, J. Humlíček

Institutions: Central European Institute of Technology – Masaryk University, Central European Institute of Technology, Brno University of Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funders: Technologická Agentura České Republiky, European Regional Development Fund, European Social Fund