Work

Enhancement of figure of merit (ZT) by doping Bi in Mg2Si for energy harvesting applications

Year: 2016

Type: article

Abstract: Magnesium Silicide is one of the interesting thermoelectric materials known for relative abundance of its constituents, thermal stability, non-toxicity and environmental friendly nature. In this paper we have theoretically studied Bi doped Mg 2 Si. The electronic structure calculations predict non-existence of the energy gap for Mg 2 Si 1 −x Bi x with (0.125≤ x≤0.5). It has been found that the system with x=0.125 exhibits highest Seebeck coefficient and electrical conductivity. Due to low thermal conductivity at x=0.125, Mg 2 Si 0.875 Bi 0.125 attained maximum value of dimensionless figure of merit 0.67 at 1200 K. With increase in concentration of Bi, the value of figure of merit decreases.

Source: Progress in Natural Science Materials International

DOI: 10.1016/j.pnsc.2016.11.003

Authors: Kulwinder Kaur, Ranjan Kumar

Institution: Panjab University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $2,790