Work

HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process

Year: 2017

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2017.01.002

Authors: M. Pons, J. Su, M. Chubarov, R. Boichot, F. Mercier, E. Blanquet, G. Giusti, D. Pique

Institutions: Centre National de la Recherche Scientifique, Science et Ingénierie des Matériaux et Procédés, Université Grenoble Alpes, Xi'an Jiaotong University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Award: “On Pillars” Epitaxial Overgrowth of Freestanding AlN Layers

OpenAlex ID: W2568624883

FWCI: 0.327

Cites: 37

Cited by: 6

Related to: 10