Work

Thermoelectric Properties of p-Type Cr Doped MnSiγ Prepared by Liquid Quenching Technique

Year: 2017

Type: article

Abstract: In this work, higher manganese silicide (HMS) with partial substitution of Cr for Mn has been studied.The Cr substitution was used to tune the carrier concentration for obtaining optimized thermoelectric properties.In order to have a wide range of carrier concentration, we employed liquid quenching technique, because the rapid quenching increases the solubility of Cr in HMS.The maximum solubility of 11 at.%Cr at Mn site in HMS was achieved in this study.The hole concentration increases with increasing Cr concentration, with that minimum electrical resistivity of 1 mΩcm was observed for Mn 25.3 Cr 11 Si 63.9 .The power factor was decreased with increasing Cr concentration due to reduction in Seebeck coefficient, but further addition of Cr showed increasing tendency for power factor.The maximum power factor of 1.5 mWm -1 K -2 with ZT of 0.4 was obtained at 700 K for Mn 25.3 Cr 11 Si 63.9 .[

Source: MATERIALS TRANSACTIONS

DOI: 10.2320/matertrans.m2016246

Authors: Swapnil Ghodke, A. Yamamoto, M. Omprakash, H. Ikuta, T. Takeuchi

Institutions: Nagoya University, Toyota Technological Institute

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Japan Society for the Promotion of Science, Precursory Research for Embryonic Science and Technology

Awards: Development of high-performance thermoelectric materials using energy selective scattering effects, Development of high-performance thero-functional materials using the unusual thermal conductivity caused by fine electronic structure