Work

Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology

Year: 2016

Type: conference-paper

Abstract: We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both single photon counting (SPC) intensity, and time resolved imaging. The 128×120 prototype has a pixel pitch of 7.83 μm making it the smallest pixel reported for SPAD image sensors. A low power, high density 40nm bottom tier hosts the quenching front end and processing electronics while an imaging specific 65nm top tier hosts the photo-detectors with a 1-to-1 hybrid bond connection [1]. The SPAD exhibits a median dark count rate (DCR) below 200cps at room temperature and 1V excess bias, and has a peak photon detection probability (PDP) of 27.5% at 640nm and 3 V excess bias.

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2016.7838372

Authors: T. Al Abbas, N. A. W. Dutton, O. Almer, S. Pellegrini, Y. Henrion, R. K. Henderson

Institutions: University of Edinburgh, STMicroelectronics (United Kingdom), STMicroelectronics (France)

Language: English

Topic: Advanced Optical Sensing Technologies

Subfield: Instrumentation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Awards: Multiplexed 'Touch and Tell' Optical Molecular Sensing and Imaging, G4554086864, G789800706, G8703912931