Work

2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors

Year: 2017

Type: article

Abstract: The authors report electronic transport characterization and 2D insulator–metal transition in aerosol-jet-printed, electrolyte-gated In2O3 thin film transistors (TFTs) at electron densities of 1014 cm−2 and mobility of 10 cm2 V−1 s−1, demonstrating the potential for fundamental transport physics as well as maximizing ON current in solution-processed TFTs.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.201600369

Authors: Wei Xie, Xin Zhang, Chris Leighton, C. Daniel Frisbie

Institutions: University of Minnesota, University of Minnesota System

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze