Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device
Year: 2012
Type: article
Source: Technical report of IEICE. SDM
Institution: Kyushu University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2585297009