Work

Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

Year: 2016

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2016.7838371

Authors: Nuo Xu, Jing Wang, Yexin Deng, Yang Lu, Bo Fu, Woosung Choi, Udit Monga, Jongwook Jeon, Jongchol Kim, Keun-Ho Lee, Eun Seung Jung

Institutions: Purdue University West Lafayette, Samsung Semiconductor (United States), Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2585791978

FWCI: 12.33

Cites: 14

Cited by: 16

Related to: 10