Work

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

Year: 2017

Type: article

Source: Chemistry of Materials

DOI: 10.1021/acs.chemmater.7b00220

Authors: Hongchu Du, Chun-Lin Jia, Annemarie Koehl, Juri Barthel, Regina Dittmann, Rainer Waser, Joachim Mayer

Institutions: Forschungszentrum Jülich, Ernst Ruska Centre, RWTH Aachen University, Xi'an Jiaotong University, Jülich Aachen Research Alliance

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsche Forschungsgemeinschaft

Awards: G4005770718, G4928488920

OpenAlex ID: W2592231104

FWCI: 4.588

Cites: 53

Cited by: 90

Related to: 10