Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
Year: 2017
Type: article
Institutions: Institute for Basic Science, Sungkyunkwan University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funder: Institute for Basic Science
Award: G258299307
OpenAlex ID: W2593389220