Characterization of n-type In3Sb1Te2 and p-type Ge2Sb2Te5 Thin Films for Thermoelectric Generators
Year: 2017
Type: article
Abstract: A thin film thermoelectric generator that consisted of 5 p/n pairs was fabricated with 1 μm-thick n-type In3Sb1Te2 and p-type Ge2Sb2Te5 deposited via radio frequency magnetron sputtering. First, 1 μm-thick GST and IST thin films were deposited at 250 °C and room temperature, respectively, via radio-frequency sputtering; these films were annealed from 250 to 450 °C via rapid thermal annealing. The optimal power factor was found at an annealing temperature of 400 °C for 10 min. To demonstrate thermoelectric generation, we measured the output voltage and estimated the maximum power of the n-IST/p-GST generator by imposing a temperature difference between the hot and cold junctions. The maximum output voltage and the estimated maximum power of the 1 μm-thick n-IST/p-GST TE generators are approximately 17.1 mV and 5.1 nW at ΔT = 12K, respectively.
Authors: So-Hyeon Kang, Hye-Ji Seo, Soon-Gil Yoon
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2597325302