Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
Work
Year: 2017
Type: article
Abstract: Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, re... more
Source: Nanoscale Research Letters
Institutions Beijing Jiaotong University, Hebei University, University of Arkansas at Fayetteville, California NanoSystems Institute, University of California, Los Angeles
Cites: 40
Cited by: 30
Related to: 10
FWCI: 1.784
Citation percentile (by year/subfield): 78.81
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
APC paid (est): $2,072
Funders National Science Foundation, National Natural Science Foundation of China, Natural Science Foundation of Hebei Province
Grant IDS EPSCoR Grant # OIA-1457888, 61575016), A2012201013