Work

Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

Year: 2017

Type: article

Source: Superlattices and Microstructures

DOI: 10.1016/j.spmi.2016.11.071

Authors: Caifeng Zhang, Ning Tang, Lei Fu, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen

Institutions: Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1496876437, G311493228, G3174059591, G3543327792, G5278913660, G5972337941, Si衬底上氮化物半导体异质结构材料和功率电子器件相关物理问题研究, G8269200524

OpenAlex ID: W2602317877

FWCI:

Cites: 10

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Related to: 10