Work

Mixed mode performance of GaAs UTB-MOSFET with extra insulator region and undoped buried oxide region

Year: 2017

Type: article

Abstract: Investigation of mixed mode performances for GaAs UTB-MOSFET at nanoscale regime keeping in view of "Beyond CMOS" is the current trend of semiconductor industry. Here it is proposed to modify conventional models by considering an extra Insulator Region (IR) and Undoped Buried oxide Region (UBR) to study the performance related to digital and analog/RF applications. Here a GaAs is considered as the channel material. The IR-UTB-SOI-n-MOSFET has shown promising results with respect to SS, DIBL, fT and switching speed.

Source: Facta universitatis - series Electronics and Energetics

DOI: 10.2298/fuee1703375d

Authors: Shiva Das, Ananya Dastidar, Partha Sarkar, Sushanta Mohapatra

Institutions: Biju Patnaik University of Technology, KIIT University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2603401168

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Cites: 23

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Related to: 10