Year: 2017
Type: article
Abstract: Atomically thin PtSe 2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe 2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe 2 .
Source: 2D Materials
Authors: Mingzhe Yan, Eryin Wang, Xue Zhou, Guangqi Zhang, Hongyun Zhang, Kenan Zhang, Wei Yao, Nianpeng Lu, Shuzhen Yang, Shilong Wu, Tomoki Yoshikawa, Koji Miyamoto, Taichi Okuda, Yang Wu, Pu Yu, Wenhui Duan, Shuyun Zhou
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G4008699762, G4867240298
OpenAlex ID: W2604463333