Work

Understanding the Growth Kinetics of Graphene on Cu and Fe2O3 Using Inductively-Coupled Plasma Chemical Vapor Deposition

Year: 2017

Type: article

Abstract: High-quality graphene was synthesized on Cu foil and Fe 2 O 3 film using CH 4 gas via inductively-coupled plasma chemical vapor deposition (ICPCVD).The graphene film was formed on Fe 2 O 3 at a temperature as low as 700°C.Few-layer graphene was formed within a few seconds and 1 min on Cu and Fe 2 O 3 , respectively.With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer.Moreover, the crystal quality of graphene was constantly enhanced.Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.

Source: Han-guk hyeonmigyeong hakoeji/Applied microscopy

DOI: 10.9729/am.2017.47.1.13

Authors: Lam Van Nang, Dong-Ok Kim, Tran Nam Trung, Vinaya Kumar Arepalli, Eui-Tae Kim

Institutions: Chungnam National University, Trường Đại học Hoa Lư

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,590

Funder: Chungnam National University