Physical Insights Into the Nature of Gate-Induced Drain Leakage in Ultrashort Channel Nanowire FETs
Year: 2017
Type: article
Authors: Shubham Sahay, Mamidala Jagadesh Kumar
Institution: Indian Institute of Technology Delhi
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2604785376