Preparation and Properties of Thermoelectric Materials for Intermediate Temperature Range Applications
Year: 1999
Type: article
Abstract: The thermoelectric materials, n-PbTe, p-Pb1−xSnxTe (x=0.00-0.50) and p-AgSbTe2 were prepared by melt-growth and plasma-activated sintering(PAS). Compositional analysis and thermoelectric measurements were carried out on as-grown ingots. The electron concentration in the n-PbTe ingots was controlled in the range 3.0×1023∼5.0×1025 m−3 by PbI2-doping, while the concentration and Hall mobility of the sintered materials were lower than those of the melt-grown samples. For both the Pb1−xSnxTe and AgSbTe2 ingots, compositional uniformity was confirmed over a region of 80% of the total length of the ingots, while some fluctuations in electronic properties were observed in AgSbTe2 ingot. The carrier concentration of the Pb1−xSnxTe changed by two orders of magnitude from 1024 to 1026 m−3 with an increase of x, whilst that of AgSbTe2 was 1025 m−3. The properties of the AgSbTe2 were characterized by larger thermoelectric power and lower Hall mobility than those of the Pb1−xSnxTe. By using available thermal conductivity data, the estimated figure of merit for PAS-AgSbTe2 at 300 K was 9.72×10−4 K−1, which is 2-7 times larger than that of PAS-Pb1−xSnxTe
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2605906959